Abstract
The microstructure and chemistry of CuInSe2 single-crystals and Cu (In,Ga) Se2 thin films from high-efficiency devices are investigated by transmission electron microscopy and x-ray energy-dispersive spectroscopy. We find strong chemical fluctuations at the nanoscale, which result in a lattice comprising a mixture of relatively Cu-poor and Cu-rich nanodomains in both cases. These nanodomains are crystallographically coherent, and no structural lattice defects are found at the interfaces between them. These nanodomains may interconnect, forming three-dimensional, interpenetrating Cu-poor and Cu-rich percolation networks. Such interconnected structures may play a role in the high device performance of Cu (In,Ga) Se2 thin-film photovoltaics.
| Original language | American English |
|---|---|
| Article number | 121904 |
| Pages (from-to) | 1-3 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 87 |
| Issue number | 12 |
| DOIs | |
| State | Published - 19 Sep 2005 |
NLR Publication Number
- NREL/JA-520-38149
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