Charge-Trapping Model of Metastability in Doped Hydrogenated Amorphous Silicon

Research output: Contribution to journal › Article

NLR Publication Number

@article{80cb952e49d447ec94e4bd4357a122d7,

title = "Charge-Trapping Model of Metastability in Doped Hydrogenated Amorphous Silicon",

author = "NREL",

year = "1988",

doi = "10.1103/PhysRevB.38.7474",

language = "American English",

volume = "38",

pages = "7474--7479",

journal = "Physical Review B",

issn = "0163-1829",

publisher = "American Institute of Physics",

number = "11",

}