Charge Modulation Spectra in Phosphorus-Doped a-Si:H

J. Lyou; N. Kopidakis; E. A. Schiff

doi:10.1016/S0022-3093(99)00826-1

Charge Modulation Spectra in Phosphorus-Doped a-Si:H

J. Lyou
, N. Kopidakis
, E. A. Schiff

Korea University
Syracuse University

Research output: Contribution to journal › Article › peer-review

3 Scopus Citations

Abstract

We discuss models for the infrared spectrum peaked at 0.8 eV reported in voltage-modulated optical absorption measurements on a-Si:H based diodes. We associate this spectrum with interface charge modulation of the optical properties of the phosphorus-doped a-Si:H used as one electrode. We propose that the spectrum originates with the internal optical transitions of a complex incorporating four-fold coordinated phosphorus and a dangling bond. We discuss prior evidence against complexing, and suggest further experiments.

Original language	American English
Pages (from-to)	227-231
Number of pages	5
Journal	Journal of Non-Crystalline Solids
Volume	266-269
DOIs	https://doi.org/10.1016/S0022-3093(99)00826-1 https://doi.org/10.1016/s0022-3093(99)00826-1
State	Published - 2000
Externally published	Yes
Event	18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18) - Snowbird, UT, United States Duration: 23 Aug 1999 → 27 Aug 1999

Bibliographical note

Work performed by Syracuse University, Syracuse, New York

NLR Publication Number

NREL/JA-520-28659

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title = "Charge Modulation Spectra in Phosphorus-Doped a-Si:H",

abstract = "We discuss models for the infrared spectrum peaked at 0.8 eV reported in voltage-modulated optical absorption measurements on a-Si:H based diodes. We associate this spectrum with interface charge modulation of the optical properties of the phosphorus-doped a-Si:H used as one electrode. We propose that the spectrum originates with the internal optical transitions of a complex incorporating four-fold coordinated phosphorus and a dangling bond. We discuss prior evidence against complexing, and suggest further experiments.",

author = "J. Lyou and N. Kopidakis and Schiff, \{E. A.\}",

note = "Work performed by Syracuse University, Syracuse, New York; 18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18) ; Conference date: 23-08-1999 Through 27-08-1999",

year = "2000",

doi = "10.1016/S0022-3093(99)00826-1",

language = "American English",

volume = "266-269",

pages = "227--231",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Charge Modulation Spectra in Phosphorus-Doped a-Si:H

AU - Lyou, J.

AU - Kopidakis, N.

AU - Schiff, E. A.

N1 - Work performed by Syracuse University, Syracuse, New York

PY - 2000

Y1 - 2000

N2 - We discuss models for the infrared spectrum peaked at 0.8 eV reported in voltage-modulated optical absorption measurements on a-Si:H based diodes. We associate this spectrum with interface charge modulation of the optical properties of the phosphorus-doped a-Si:H used as one electrode. We propose that the spectrum originates with the internal optical transitions of a complex incorporating four-fold coordinated phosphorus and a dangling bond. We discuss prior evidence against complexing, and suggest further experiments.

AB - We discuss models for the infrared spectrum peaked at 0.8 eV reported in voltage-modulated optical absorption measurements on a-Si:H based diodes. We associate this spectrum with interface charge modulation of the optical properties of the phosphorus-doped a-Si:H used as one electrode. We propose that the spectrum originates with the internal optical transitions of a complex incorporating four-fold coordinated phosphorus and a dangling bond. We discuss prior evidence against complexing, and suggest further experiments.

UR - https://www.scopus.com/pages/publications/0000163638

U2 - 10.1016/S0022-3093(99)00826-1

DO - 10.1016/S0022-3093(99)00826-1

M3 - Article

AN - SCOPUS:0000163638

SN - 0022-3093

VL - 266-269

SP - 227

EP - 231

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

T2 - 18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18)

Y2 - 23 August 1999 through 27 August 1999

ER -

Charge Modulation Spectra in Phosphorus-Doped a-Si:H

Abstract

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