Skip to main navigation Skip to search Skip to main content

Chapter 7. External Strain: An Effective Approach to Tune Vacancy Formation and Doping

  • L. Yu
  • , Junyi Zhu
  • National Renewable Energy Laboratory

Research output: Chapter in Book/Report/Conference proceedingChapter

Original languageAmerican English
Title of host publicationDoping: Properties, Mechanisms, and Applications
EditorsL. Yu
Pages277-280
StatePublished - 2013

NLR Publication Number

  • NREL/CH-5900-54386

Keywords

  • defects
  • doping
  • semiconductor
  • strain
  • vacancy

Cite this