CdS/Cu(In,Ga)Se2 Interface Formation in High-Efficiency Thin Film Solar Cells

S. Pookpanratana; I. Repins; M. Bär; L. Weinhardt; Y. Zhang; R. F́lix; M. Blum; W. Yang; C. Heske

doi:10.1063/1.3481405

CdS/Cu(In,Ga)Se2 Interface Formation in High-Efficiency Thin Film Solar Cells

S. Pookpanratana
, I. Repins
, M. Bär
, L. Weinhardt
, Y. Zhang
, R. F́lix
, M. Blum
, W. Yang
, C. Heske

Materials, Chemical, and Computational Science

University of Nevada, Las Vegas
Helmholtz Centre Berlin for Materials and Energy
University of Würzburg
Lawrence Berkeley National Laboratory

Research output: Contribution to journal › Article › peer-review

20 Scopus Citations

Abstract

The evolution of the CdS/Cu(In,Ga)Se₂ interface in high-efficiency thin film solar cells was monitored by chemically sensitive x-ray emission spectroscopy as a function of CdS chemical bath deposition time. We find direct experimental evidence that, in the initial deposition steps, the sulfur atoms on the Cu(In,Ga)Se₂ surface exist in at least two distinct chemical environments, namely CdS and a compound involving Ga and In. The findings indicate the complexity of the CdS/Cu(In,Ga)Se₂ interface structure at the atomic scale.

Original language	American English
Article number	Article No. 074101
Number of pages	3
Journal	Applied Physics Letters
Volume	97
Issue number	7
DOIs	https://doi.org/10.1063/1.3481405 https://doi.org/10.1063/1.3481405
State	Published - 16 Aug 2010

NLR Publication Number

NREL/JA-520-49453

Keywords

CdS/Cu(In, Ga)Se2
high-efficiency
solar
thin film

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title = "CdS/Cu(In,Ga)Se2 Interface Formation in High-Efficiency Thin Film Solar Cells",

abstract = "The evolution of the CdS/Cu(In,Ga)Se2 interface in high-efficiency thin film solar cells was monitored by chemically sensitive x-ray emission spectroscopy as a function of CdS chemical bath deposition time. We find direct experimental evidence that, in the initial deposition steps, the sulfur atoms on the Cu(In,Ga)Se2 surface exist in at least two distinct chemical environments, namely CdS and a compound involving Ga and In. The findings indicate the complexity of the CdS/Cu(In,Ga)Se2 interface structure at the atomic scale.",

keywords = "CdS/Cu(In, Ga)Se2, high-efficiency, solar, thin film",

author = "S. Pookpanratana and I. Repins and M. B{\"a}r and L. Weinhardt and Y. Zhang and R. {\'F}lix and M. Blum and W. Yang and C. Heske",

year = "2010",

month = aug,

day = "16",

doi = "10.1063/1.3481405",

language = "American English",

volume = "97",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - CdS/Cu(In,Ga)Se2 Interface Formation in High-Efficiency Thin Film Solar Cells

AU - Pookpanratana, S.

AU - Repins, I.

AU - Bär, M.

AU - Weinhardt, L.

AU - Zhang, Y.

AU - F́lix, R.

AU - Blum, M.

AU - Yang, W.

AU - Heske, C.

PY - 2010/8/16

Y1 - 2010/8/16

N2 - The evolution of the CdS/Cu(In,Ga)Se2 interface in high-efficiency thin film solar cells was monitored by chemically sensitive x-ray emission spectroscopy as a function of CdS chemical bath deposition time. We find direct experimental evidence that, in the initial deposition steps, the sulfur atoms on the Cu(In,Ga)Se2 surface exist in at least two distinct chemical environments, namely CdS and a compound involving Ga and In. The findings indicate the complexity of the CdS/Cu(In,Ga)Se2 interface structure at the atomic scale.

AB - The evolution of the CdS/Cu(In,Ga)Se2 interface in high-efficiency thin film solar cells was monitored by chemically sensitive x-ray emission spectroscopy as a function of CdS chemical bath deposition time. We find direct experimental evidence that, in the initial deposition steps, the sulfur atoms on the Cu(In,Ga)Se2 surface exist in at least two distinct chemical environments, namely CdS and a compound involving Ga and In. The findings indicate the complexity of the CdS/Cu(In,Ga)Se2 interface structure at the atomic scale.

KW - CdS/Cu(In, Ga)Se2

KW - high-efficiency

KW - solar

KW - thin film

UR - https://www.scopus.com/pages/publications/77956039528

U2 - 10.1063/1.3481405

DO - 10.1063/1.3481405

M3 - Article

AN - SCOPUS:77956039528

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - Article No. 074101

ER -

CdS/Cu(In,Ga)Se2 Interface Formation in High-Efficiency Thin Film Solar Cells

Abstract

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Keywords

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