Calculation of the Valence Band Offsets of Common-Anion Semiconductor Heterojunctions from Core Levels: The Role of Cation d Orbitals

Research output: Contribution to journal › Article

Original language	American English
Pages (from-to)	1239-1245
Number of pages	7
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	5
Issue number	4
DOIs	https://doi.org/10.1116/1.583720
State	Published - 1987

NLR Publication Number

@article{6cc93cf87a484b5181d396a89ce39536,

title = "Calculation of the Valence Band Offsets of Common-Anion Semiconductor Heterojunctions from Core Levels: The Role of Cation d Orbitals",

author = "NREL",

year = "1987",

doi = "10.1116/1.583720",

language = "American English",

volume = "5",

pages = "1239--1245",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "0734-211X",

publisher = "AVS Science and Technology Society",

number = "4",

}

TY - JOUR

T1 - Calculation of the Valence Band Offsets of Common-Anion Semiconductor Heterojunctions from Core Levels: The Role of Cation d Orbitals

AU - NREL, null

PY - 1987

Y1 - 1987

U2 - 10.1116/1.583720

DO - 10.1116/1.583720

M3 - Article

SN - 0734-211X

VL - 5

SP - 1239

EP - 1245

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

ER -