Bi Isoelectronic Impurities in GaAs: Article No. 085209

Research output: Contribution to journal › Article › peer-review

Original language	American English
Number of pages	5
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	77
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevB.77.085209
State	Published - 2008

NLR Publication Number

@article{b547aa97f20244a7b5b10dd99a30f7c3,

title = "Bi Isoelectronic Impurities in GaAs: Article No. 085209",

keywords = "impurity physics, semiconductor alloys",

author = "NREL",

year = "2008",

doi = "10.1103/PhysRevB.77.085209",

language = "American English",

volume = "77",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "8",

}

TY - JOUR

T1 - Bi Isoelectronic Impurities in GaAs

T2 - Article No. 085209

AU - NREL, null

PY - 2008

Y1 - 2008

KW - impurity physics

KW - semiconductor alloys

U2 - 10.1103/PhysRevB.77.085209

DO - 10.1103/PhysRevB.77.085209

M3 - Article

SN - 1098-0121

VL - 77

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 8

ER -