Basic Studies of III-V High Efficienty Cell Components: Annual Subcontract Report, 15 August 1988 - 14 August 1989

This report describes activities during the fourth year of a project to improve the understanding of the generation, recombination, and transport of carriers within III-V homo- and heterostructures. Work in the fourth year concentrated on studying heavy doping effects in p+-GaAs, assessing the importance of similar effects in n+-GaAs, and characterizing, controlling, and passivating perimeterrecombination currents. Work also began to identify the dominant loss mechanisms in Al0.2Ga0.8As solar cells. A new molecular beam epitaxy growth facility was brought on line, and 23.8%-efficient one-sun solar cells were fabricated.