Bandgap Narrowing in Moderately to Heavily Doped Silicon

Research output: Contribution to journal › Article

Original language	American English
Pages (from-to)	1014-1018
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	ED-26
Issue number	7
DOIs	https://doi.org/10.1109/T-ED.1979.19538
State	Published - 1979

NLR Publication Number

@article{aac5d1cac0bf4fbd891cce90458bea1c,

title = "Bandgap Narrowing in Moderately to Heavily Doped Silicon",

author = "NREL",

year = "1979",

doi = "10.1109/T-ED.1979.19538",

language = "American English",

volume = "ED-26",

pages = "1014--1018",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}