AX-Type Defects in Zinc-Doped GaAs(1-x)P(x) on GaAs: Article No. 123719

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NLR Publication Number

@article{cade74711cb645d88588c7b1b96e05b9,

title = "AX-Type Defects in Zinc-Doped GaAs(1-x)P(x) on GaAs: Article No. 123719",

keywords = "doping, GaAs alloys, photovoltaics, solar cells",

author = "Mark Wanlass and P.R. Simov and D.G. Hampton and T.H. Gfroerer",

year = "2010",

doi = "10.1063/1.3436590",

language = "American English",

volume = "107",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - AX-Type Defects in Zinc-Doped GaAs(1-x)P(x) on GaAs

T2 - Article No. 123719

AU - Wanlass, Mark

AU - Simov, P.R.

AU - Hampton, D.G.

AU - Gfroerer, T.H.

PY - 2010

Y1 - 2010

KW - doping

KW - GaAs alloys

KW - photovoltaics

KW - solar cells

U2 - 10.1063/1.3436590

DO - 10.1063/1.3436590

M3 - Article

SN - 0021-8979

VL - 107

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

ER -