Atomic-Scale Characterization of Hydrogenated Amorphous-Silicon Films and Devices: Annual Subcontract Report, 14 February 1995 - 14 April 1996

Our research is concerned with improving the electronic properties of hydrogenated amorphous silicon (a-Si:H) films and of photovoltaic (PV) cells that use these films. Two approaches toward this goal are being taken. One is to establish the character of silicon particle growth in the rf glow discharges that are used to make the films and PV cells, and to understand the particle incorporationinto the films. The ultimate goal of this effort is to find mitigating techniques that minimize the particle incorporation. During this contract period, we have developed a novel particle light-scattering technique that provides a very detailed and sensitive diagnostic of the particles suspended in the discharge, The second program is directed toward measuring the electronic properties of thesethin-film PV cells, as a function of depth within the cell. The approach being taken is to use a scanning tunneling microscope to measure the depth-dependent electronic properties of cross-sectioned PV cells. During the present period, cell cleaving and cross-section locating methods, both in a ultrahigh vacuum environment, have been successfully developed.