Atomic-Resolution Z-Contrast Imaging and Its Application to Compositional Ordering and Segregation

S. J. Pennycook; Y. Yan; A. Norman; Y. Zhang; M. Al-Jassim; A. Mascarenhas; S. P. Ahrenkiel; M. F. Chisholm; G. Duscher; S. T. Pantelides

Atomic-Resolution Z-Contrast Imaging and Its Application to Compositional Ordering and Segregation

S. J. Pennycook
, Y. Yan
, A. Norman
, Y. Zhang
, M. Al-Jassim
, A. Mascarenhas
, S. P. Ahrenkiel
, M. F. Chisholm
, G. Duscher
, S. T. Pantelides

Oak Ridge National Laboratory
Vanderbilt University
National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

Abstract

The Z-contrast microscopy technique can be used to study compositional ordering and segregation at the atomic scale. This article discusses three examples of ordering: ferroelectric materials; III-V semiconductor alloys; and cooperative segregation at a semiconductor grain boundary, where a combination of Z-contrast imaging with first principles theory provides a complete atomic-scale view of the sites and configurations of the segregant atoms.

Original language	American English
Pages	235-242
Number of pages	8
State	Published - 2000
Externally published	Yes
Event	Self-Organized Processes in Semiconductor Alloys - Boston, MA, USA Duration: 29 Nov 1999 → 2 Dec 1999

Conference

Conference	Self-Organized Processes in Semiconductor Alloys
City	Boston, MA, USA
Period	29/11/99 → 2/12/99

NLR Publication Number

NREL/CP-590-29973

Cite this

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title = "Atomic-Resolution Z-Contrast Imaging and Its Application to Compositional Ordering and Segregation",

abstract = "The Z-contrast microscopy technique can be used to study compositional ordering and segregation at the atomic scale. This article discusses three examples of ordering: ferroelectric materials; III-V semiconductor alloys; and cooperative segregation at a semiconductor grain boundary, where a combination of Z-contrast imaging with first principles theory provides a complete atomic-scale view of the sites and configurations of the segregant atoms.",

author = "Pennycook, \{S. J.\} and Y. Yan and A. Norman and Y. Zhang and M. Al-Jassim and A. Mascarenhas and Ahrenkiel, \{S. P.\} and Chisholm, \{M. F.\} and G. Duscher and Pantelides, \{S. T.\}",

year = "2000",

language = "American English",

pages = "235--242",

note = "Self-Organized Processes in Semiconductor Alloys ; Conference date: 29-11-1999 Through 02-12-1999",

}

TY - CONF

T1 - Atomic-Resolution Z-Contrast Imaging and Its Application to Compositional Ordering and Segregation

AU - Pennycook, S. J.

AU - Yan, Y.

AU - Norman, A.

AU - Zhang, Y.

AU - Al-Jassim, M.

AU - Mascarenhas, A.

AU - Ahrenkiel, S. P.

AU - Chisholm, M. F.

AU - Duscher, G.

AU - Pantelides, S. T.

PY - 2000

Y1 - 2000

N2 - The Z-contrast microscopy technique can be used to study compositional ordering and segregation at the atomic scale. This article discusses three examples of ordering: ferroelectric materials; III-V semiconductor alloys; and cooperative segregation at a semiconductor grain boundary, where a combination of Z-contrast imaging with first principles theory provides a complete atomic-scale view of the sites and configurations of the segregant atoms.

AB - The Z-contrast microscopy technique can be used to study compositional ordering and segregation at the atomic scale. This article discusses three examples of ordering: ferroelectric materials; III-V semiconductor alloys; and cooperative segregation at a semiconductor grain boundary, where a combination of Z-contrast imaging with first principles theory provides a complete atomic-scale view of the sites and configurations of the segregant atoms.

UR - https://www.scopus.com/pages/publications/0033711069

M3 - Paper

AN - SCOPUS:0033711069

SP - 235

EP - 242

T2 - Self-Organized Processes in Semiconductor Alloys

Y2 - 29 November 1999 through 2 December 1999

ER -

Atomic-Resolution Z-Contrast Imaging and Its Application to Compositional Ordering and Segregation

Abstract

Conference

NLR Publication Number

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