Assessment of Intrinsic-Layer Growth Temperature to High-Deposition-Rate a-Si:H n-i-p Solar Cells Deposited by Hot-Wire CVD

Assessment of Intrinsic-Layer Growth Temperature to High-Deposition-Rate a-Si:H n-i-p Solar Cells Deposited by Hot-Wire CVD

NREL

Research output: Contribution to conference › Paper

Original language	American English
Pages	163-168
Number of pages	6
State	Published - 1999
Event	Amorphous and Heterogeneous Silicon Thin Films: Fundamentals to Devices 1999: Materials Research Society Symposium - San Francisco, Califiornia Duration: 5 Apr 1999 → 9 Apr 1999

Conference

Conference	Amorphous and Heterogeneous Silicon Thin Films: Fundamentals to Devices 1999: Materials Research Society Symposium
City	San Francisco, Califiornia
Period	5/04/99 → 9/04/99

NLR Publication Number

NREL/CP-520-26486

Cite this

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title = "Assessment of Intrinsic-Layer Growth Temperature to High-Deposition-Rate a-Si:H n-i-p Solar Cells Deposited by Hot-Wire CVD",

author = "NREL",

year = "1999",

language = "American English",

pages = "163--168",

note = "Amorphous and Heterogeneous Silicon Thin Films: Fundamentals to Devices 1999: Materials Research Society Symposium ; Conference date: 05-04-1999 Through 09-04-1999",

}

TY - CONF

T1 - Assessment of Intrinsic-Layer Growth Temperature to High-Deposition-Rate a-Si:H n-i-p Solar Cells Deposited by Hot-Wire CVD

AU - NREL, null

PY - 1999

Y1 - 1999

UR - https://www.scopus.com/pages/publications/0033299967

M3 - Paper

SP - 163

EP - 168

T2 - Amorphous and Heterogeneous Silicon Thin Films: Fundamentals to Devices 1999: Materials Research Society Symposium

Y2 - 5 April 1999 through 9 April 1999

ER -

Assessment of Intrinsic-Layer Growth Temperature to High-Deposition-Rate a-Si:H n-i-p Solar Cells Deposited by Hot-Wire CVD

Conference

NLR Publication Number

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Cite this