Antimony Diffusion in CdTe

Eric Colegrove; Steven Harvey; Jihui Yang; David Albin; Wyatt Metzger; Joel Duenow; Su-Huai Wei; James Burst

doi:10.1109/JPHOTOV.2017.2655033

Antimony Diffusion in CdTe

Eric Colegrove
, Steven Harvey
, Jihui Yang
, David Albin
, Wyatt Metzger
, Joel Duenow
, Su-Huai Wei
, James Burst

Materials Science

Beijing Computational Science Research Center

Research output: Contribution to journal › Article › peer-review

14 Scopus Citations

Abstract

Group V dopants may be used for next-generation high-voltage cadmium telluride (CdTe) solar photovoltaics, but fundamental defect energetics and kinetics need to be understood. Here, antimony (Sb) diffusion is studied in single-crystal and polycrystalline CdTe under Cd-rich conditions. Diffusion profiles are determined by dynamic secondary ion mass spectroscopy and analyzed with analytical bulk and grain-boundary diffusion models. Slow bulk and fast grain-boundary diffusion are found. Density functional theory is used to understand formation energy and mechanisms. The theory and experimental results create new understanding of group V defect kinetics in CdTe.

Original language	American English
Article number	7847422
Pages (from-to)	870-873
Number of pages	4
Journal	IEEE Journal of Photovoltaics
Volume	7
Issue number	3
DOIs	https://doi.org/10.1109/JPHOTOV.2017.2655033 https://doi.org/10.1109/JPHOTOV.2017.2655033
State	Published - May 2017

Bibliographical note

Publisher Copyright:
© 2017 IEEE.

NLR Publication Number

NREL/JA-5K00-65802

Keywords

Antimony
Density functional theory
Diffusion processes
Grain boundaries
II-VI semiconductor materials

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title = "Antimony Diffusion in CdTe",

abstract = "Group V dopants may be used for next-generation high-voltage cadmium telluride (CdTe) solar photovoltaics, but fundamental defect energetics and kinetics need to be understood. Here, antimony (Sb) diffusion is studied in single-crystal and polycrystalline CdTe under Cd-rich conditions. Diffusion profiles are determined by dynamic secondary ion mass spectroscopy and analyzed with analytical bulk and grain-boundary diffusion models. Slow bulk and fast grain-boundary diffusion are found. Density functional theory is used to understand formation energy and mechanisms. The theory and experimental results create new understanding of group V defect kinetics in CdTe.",

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author = "Eric Colegrove and Steven Harvey and Jihui Yang and David Albin and Wyatt Metzger and Joel Duenow and Su-Huai Wei and James Burst",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.",

year = "2017",

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doi = "10.1109/JPHOTOV.2017.2655033",

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AU - Colegrove, Eric

AU - Harvey, Steven

AU - Yang, Jihui

AU - Albin, David

AU - Metzger, Wyatt

AU - Duenow, Joel

AU - Wei, Su-Huai

AU - Burst, James

PY - 2017/5

Y1 - 2017/5

N2 - Group V dopants may be used for next-generation high-voltage cadmium telluride (CdTe) solar photovoltaics, but fundamental defect energetics and kinetics need to be understood. Here, antimony (Sb) diffusion is studied in single-crystal and polycrystalline CdTe under Cd-rich conditions. Diffusion profiles are determined by dynamic secondary ion mass spectroscopy and analyzed with analytical bulk and grain-boundary diffusion models. Slow bulk and fast grain-boundary diffusion are found. Density functional theory is used to understand formation energy and mechanisms. The theory and experimental results create new understanding of group V defect kinetics in CdTe.

AB - Group V dopants may be used for next-generation high-voltage cadmium telluride (CdTe) solar photovoltaics, but fundamental defect energetics and kinetics need to be understood. Here, antimony (Sb) diffusion is studied in single-crystal and polycrystalline CdTe under Cd-rich conditions. Diffusion profiles are determined by dynamic secondary ion mass spectroscopy and analyzed with analytical bulk and grain-boundary diffusion models. Slow bulk and fast grain-boundary diffusion are found. Density functional theory is used to understand formation energy and mechanisms. The theory and experimental results create new understanding of group V defect kinetics in CdTe.

KW - Antimony

KW - Density functional theory

KW - Diffusion processes

KW - Grain boundaries

KW - II-VI semiconductor materials

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M3 - Article

AN - SCOPUS:85012233031

SN - 2156-3381

VL - 7

SP - 870

EP - 873

JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

IS - 3

M1 - 7847422

ER -

Antimony Diffusion in CdTe

Abstract

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Keywords

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