Analysis of the GaInP/GaAs/1-eV/Ge Cell and Related Structures for Terrestrial Concentrator Application

D. J. Friedman; Sarah R. Kurtz; J. F. Geisz

Analysis of the GaInP/GaAs/1-eV/Ge Cell and Related Structures for Terrestrial Concentrator Application

Research output: Contribution to conference › Paper › peer-review

22 Scopus Citations

Abstract

We analyze the potential of the GaInP/GaAs/1-eV/Ge four-junction solar cell to improve on the efficiency of the state-of-the-art GaInP/GaAs/Ge benchmark. We emphasize the following factors: (1) The newly proposed terrestrial concentrator spectrum has a lower ratio of red to blue light than does the AM1.5 direct spectrum. (2) Standard two-layer antireflection coatings do not provide near-zero reflectance over the full spectral range of interest for these devices. (3) Increasing temperature lowers the junction bandgaps, redistributing light to the top junctions. (4) GaInNAs junctions used to date for the 1-eV junction have quantum efficiencies less than ∼-75%. These factors all limit the device current, adversely affecting the four-junction efficiency. We discuss strategies for ameliorating this problem, including going to alternate structures such as a GaInP/GaAs/0.9-ev three-junction device.

Original language	American English
Pages	856-859
Number of pages	4
State	Published - 2002
Event	29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States Duration: 19 May 2002 → 24 May 2002

Conference

Conference	29th IEEE Photovoltaic Specialists Conference
Country/Territory	United States
City	New Orleans, LA
Period	19/05/02 → 24/05/02

Bibliographical note

For preprint version including full text online document, see NREL/CP-520-32188

NLR Publication Number

NREL/CP-520-33722

Cite this

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title = "Analysis of the GaInP/GaAs/1-eV/Ge Cell and Related Structures for Terrestrial Concentrator Application",

abstract = "We analyze the potential of the GaInP/GaAs/1-eV/Ge four-junction solar cell to improve on the efficiency of the state-of-the-art GaInP/GaAs/Ge benchmark. We emphasize the following factors: (1) The newly proposed terrestrial concentrator spectrum has a lower ratio of red to blue light than does the AM1.5 direct spectrum. (2) Standard two-layer antireflection coatings do not provide near-zero reflectance over the full spectral range of interest for these devices. (3) Increasing temperature lowers the junction bandgaps, redistributing light to the top junctions. (4) GaInNAs junctions used to date for the 1-eV junction have quantum efficiencies less than ∼-75\%. These factors all limit the device current, adversely affecting the four-junction efficiency. We discuss strategies for ameliorating this problem, including going to alternate structures such as a GaInP/GaAs/0.9-ev three-junction device.",

author = "Friedman, \{D. J.\} and Kurtz, \{Sarah R.\} and Geisz, \{J. F.\}",

note = "For preprint version including full text online document, see NREL/CP-520-32188; 29th IEEE Photovoltaic Specialists Conference ; Conference date: 19-05-2002 Through 24-05-2002",

year = "2002",

language = "American English",

pages = "856--859",

}

TY - CONF

T1 - Analysis of the GaInP/GaAs/1-eV/Ge Cell and Related Structures for Terrestrial Concentrator Application

AU - Friedman, D. J.

AU - Kurtz, Sarah R.

AU - Geisz, J. F.

N1 - For preprint version including full text online document, see NREL/CP-520-32188

PY - 2002

Y1 - 2002

N2 - We analyze the potential of the GaInP/GaAs/1-eV/Ge four-junction solar cell to improve on the efficiency of the state-of-the-art GaInP/GaAs/Ge benchmark. We emphasize the following factors: (1) The newly proposed terrestrial concentrator spectrum has a lower ratio of red to blue light than does the AM1.5 direct spectrum. (2) Standard two-layer antireflection coatings do not provide near-zero reflectance over the full spectral range of interest for these devices. (3) Increasing temperature lowers the junction bandgaps, redistributing light to the top junctions. (4) GaInNAs junctions used to date for the 1-eV junction have quantum efficiencies less than ∼-75%. These factors all limit the device current, adversely affecting the four-junction efficiency. We discuss strategies for ameliorating this problem, including going to alternate structures such as a GaInP/GaAs/0.9-ev three-junction device.

AB - We analyze the potential of the GaInP/GaAs/1-eV/Ge four-junction solar cell to improve on the efficiency of the state-of-the-art GaInP/GaAs/Ge benchmark. We emphasize the following factors: (1) The newly proposed terrestrial concentrator spectrum has a lower ratio of red to blue light than does the AM1.5 direct spectrum. (2) Standard two-layer antireflection coatings do not provide near-zero reflectance over the full spectral range of interest for these devices. (3) Increasing temperature lowers the junction bandgaps, redistributing light to the top junctions. (4) GaInNAs junctions used to date for the 1-eV junction have quantum efficiencies less than ∼-75%. These factors all limit the device current, adversely affecting the four-junction efficiency. We discuss strategies for ameliorating this problem, including going to alternate structures such as a GaInP/GaAs/0.9-ev three-junction device.

UR - https://www.scopus.com/pages/publications/0036948505

M3 - Paper

AN - SCOPUS:0036948505

SP - 856

EP - 859

T2 - 29th IEEE Photovoltaic Specialists Conference

Y2 - 19 May 2002 through 24 May 2002

ER -

Analysis of the GaInP/GaAs/1-eV/Ge Cell and Related Structures for Terrestrial Concentrator Application

Abstract

Conference

Bibliographical note

NLR Publication Number

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