Abstract
A report on an electrostatic barrier to trap filling in CuIn 1-xGaxSe2 was presented. The resulting nonexponential transient capacitance emission signal was recorded for several minutes. The potential barrier height to trap filling was found to be ∼0.3 eV for all-alloy compositions.
| Original language | American English |
|---|---|
| Pages (from-to) | 2363-2365 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 83 |
| Issue number | 12 |
| DOIs | |
| State | Published - 22 Sep 2003 |
NLR Publication Number
- NREL/JA-520-34415
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