Amorphous/Crystalline Silicon Heterojunction Solar Cells with Varying I-Layer Thickness

M. R. Page; E. Iwaniczko; Y. Q. Xu; L. Roybal; F. Hasoon; Q. Wang; R. S. Crandall

doi:10.1016/j.tsf.2011.01.293

Amorphous/Crystalline Silicon Heterojunction Solar Cells with Varying I-Layer Thickness

M. R. Page
, E. Iwaniczko
, Y. Q. Xu
, L. Roybal
, F. Hasoon
, Q. Wang
, R. S. Crandall

Chemistry and Nanoscience

National Renewable Energy Laboratory

Research output: Contribution to conference › Paper › peer-review

43 Scopus Citations

Abstract

We study the effect on various properties of varying the intrinsic layer (i-layer) thickness of amorphous/crystalline silicon heterojunction (SHJ) solar cells. Double-side monocrystalline silicon (c-Si) heterojunction solar cells are made using hot-wire chemical vapor deposition on high-lifetime n-type Czochralski wafers. We fabricate a series of SHJ solar cells with the amorphous silicon (a-Si:H) i-layer thickness at the front emitter varying from 3.2 nm (0.8xi) to ∼ 96 nm (24xi). Our optimized i-layer thickness is about 4 nm (1xi). Our reference cell (1xi) performance has an efficiency of 17.1% with open-circuit voltage (V_oc) of 684 mV, fill factor (FF) of 76%, and short-circuit current density (J_sc) of 33.1 mA/cm². With an increase of i-layer thickness, V_oc changes little, whereas the FF falls significantly after 12 nm (3xi) of i-layer. Transient capacitance measurements are used to probe the effect of the potential barrier at the n-type c-Si/a-Si interface on minority-carrier collection. We show that hole transport through the i-layer is field-driven transport rather than tunneling.

Original language	American English
Pages	4527-4530
Number of pages	4
DOIs	https://doi.org/10.1016/j.tsf.2011.01.293 https://doi.org/10.1016/j.tsf.2011.01.293
State	Published - 2011
Event	Sixth International Conference on Hot-Wire Chemical Vapor Deposition Process - Paris, France Duration: 13 Sep 2010 → 17 Sep 2010

Conference

Conference	Sixth International Conference on Hot-Wire Chemical Vapor Deposition Process
City	Paris, France
Period	13/09/10 → 17/09/10

NLR Publication Number

NREL/CP-5200-48956

Keywords

Amorphous silicon
Catalytic CVD
Heterojunction
Hot-wire deposition
Solar cell
Transient capacitance

Access to Document

Cite this

Page, M. R., Iwaniczko, E., Xu, Y. Q., Roybal, L., Hasoon, F., Wang, Q., & Crandall, R. S. (2011). Amorphous/Crystalline Silicon Heterojunction Solar Cells with Varying I-Layer Thickness. 4527-4530. Paper presented at Sixth International Conference on Hot-Wire Chemical Vapor Deposition Process, Paris, France. https://doi.org/10.1016/j.tsf.2011.01.293, https://doi.org/10.1016/j.tsf.2011.01.293

@conference{e06b284c8bd946fe9e30464c54d825fa,

title = "Amorphous/Crystalline Silicon Heterojunction Solar Cells with Varying I-Layer Thickness",

abstract = "We study the effect on various properties of varying the intrinsic layer (i-layer) thickness of amorphous/crystalline silicon heterojunction (SHJ) solar cells. Double-side monocrystalline silicon (c-Si) heterojunction solar cells are made using hot-wire chemical vapor deposition on high-lifetime n-type Czochralski wafers. We fabricate a series of SHJ solar cells with the amorphous silicon (a-Si:H) i-layer thickness at the front emitter varying from 3.2 nm (0.8xi) to ∼ 96 nm (24xi). Our optimized i-layer thickness is about 4 nm (1xi). Our reference cell (1xi) performance has an efficiency of 17.1\% with open-circuit voltage (Voc) of 684 mV, fill factor (FF) of 76\%, and short-circuit current density (Jsc) of 33.1 mA/cm2. With an increase of i-layer thickness, Voc changes little, whereas the FF falls significantly after 12 nm (3xi) of i-layer. Transient capacitance measurements are used to probe the effect of the potential barrier at the n-type c-Si/a-Si interface on minority-carrier collection. We show that hole transport through the i-layer is field-driven transport rather than tunneling.",

keywords = "Amorphous silicon, Catalytic CVD, Heterojunction, Hot-wire deposition, Solar cell, Transient capacitance",

author = "Page, \{M. R.\} and E. Iwaniczko and Xu, \{Y. Q.\} and L. Roybal and F. Hasoon and Q. Wang and Crandall, \{R. S.\}",

year = "2011",

doi = "10.1016/j.tsf.2011.01.293",

language = "American English",

pages = "4527--4530",

note = "Sixth International Conference on Hot-Wire Chemical Vapor Deposition Process ; Conference date: 13-09-2010 Through 17-09-2010",

}

Page, MR, Iwaniczko, E, Xu, YQ, Roybal, L, Hasoon, F, Wang, Q & Crandall, RS 2011, 'Amorphous/Crystalline Silicon Heterojunction Solar Cells with Varying I-Layer Thickness', Paper presented at Sixth International Conference on Hot-Wire Chemical Vapor Deposition Process, Paris, France, 13/09/10 - 17/09/10 pp. 4527-4530. https://doi.org/10.1016/j.tsf.2011.01.293, https://doi.org/10.1016/j.tsf.2011.01.293

TY - CONF

T1 - Amorphous/Crystalline Silicon Heterojunction Solar Cells with Varying I-Layer Thickness

AU - Page, M. R.

AU - Iwaniczko, E.

AU - Xu, Y. Q.

AU - Roybal, L.

AU - Hasoon, F.

AU - Wang, Q.

AU - Crandall, R. S.

PY - 2011

Y1 - 2011

N2 - We study the effect on various properties of varying the intrinsic layer (i-layer) thickness of amorphous/crystalline silicon heterojunction (SHJ) solar cells. Double-side monocrystalline silicon (c-Si) heterojunction solar cells are made using hot-wire chemical vapor deposition on high-lifetime n-type Czochralski wafers. We fabricate a series of SHJ solar cells with the amorphous silicon (a-Si:H) i-layer thickness at the front emitter varying from 3.2 nm (0.8xi) to ∼ 96 nm (24xi). Our optimized i-layer thickness is about 4 nm (1xi). Our reference cell (1xi) performance has an efficiency of 17.1% with open-circuit voltage (Voc) of 684 mV, fill factor (FF) of 76%, and short-circuit current density (Jsc) of 33.1 mA/cm2. With an increase of i-layer thickness, Voc changes little, whereas the FF falls significantly after 12 nm (3xi) of i-layer. Transient capacitance measurements are used to probe the effect of the potential barrier at the n-type c-Si/a-Si interface on minority-carrier collection. We show that hole transport through the i-layer is field-driven transport rather than tunneling.

AB - We study the effect on various properties of varying the intrinsic layer (i-layer) thickness of amorphous/crystalline silicon heterojunction (SHJ) solar cells. Double-side monocrystalline silicon (c-Si) heterojunction solar cells are made using hot-wire chemical vapor deposition on high-lifetime n-type Czochralski wafers. We fabricate a series of SHJ solar cells with the amorphous silicon (a-Si:H) i-layer thickness at the front emitter varying from 3.2 nm (0.8xi) to ∼ 96 nm (24xi). Our optimized i-layer thickness is about 4 nm (1xi). Our reference cell (1xi) performance has an efficiency of 17.1% with open-circuit voltage (Voc) of 684 mV, fill factor (FF) of 76%, and short-circuit current density (Jsc) of 33.1 mA/cm2. With an increase of i-layer thickness, Voc changes little, whereas the FF falls significantly after 12 nm (3xi) of i-layer. Transient capacitance measurements are used to probe the effect of the potential barrier at the n-type c-Si/a-Si interface on minority-carrier collection. We show that hole transport through the i-layer is field-driven transport rather than tunneling.

KW - Amorphous silicon

KW - Catalytic CVD

KW - Heterojunction

KW - Hot-wire deposition

KW - Solar cell

KW - Transient capacitance

UR - https://www.scopus.com/pages/publications/79958776158

U2 - 10.1016/j.tsf.2011.01.293

DO - 10.1016/j.tsf.2011.01.293

M3 - Paper

AN - SCOPUS:79958776158

SP - 4527

EP - 4530

T2 - Sixth International Conference on Hot-Wire Chemical Vapor Deposition Process

Y2 - 13 September 2010 through 17 September 2010

ER -

Amorphous/Crystalline Silicon Heterojunction Solar Cells with Varying I-Layer Thickness

Abstract

Conference

NLR Publication Number

Keywords

Access to Document

Other files and links

Fingerprint

Cite this