Amorphous Silicon Research, Phase II: Annual Technical Progress Report, 1 August 1995 - 31 July 1996

This report describes the progress made during the second year of a 3-year research program to improve our understanding and capabilities for developing multijunction, hydrogenated amorphous silicon alloy cells and modules. Highlights of the work include the investigation of new deposition regimes to control substrate bias during deposition, the substitution of hydrogen by deuterium to improvecell stability, the use of microcrystalline n layer to improve tunnel junction properties, and the development of high-efficiency component and multijunction cells. Progress has been demonstrated in the performance of all the component cells leading to the world-record achievement of 11.8% stable active-area cell efficiency using a triple-junction structure.