AlN Base Material Development for High Temperature Application

Keisuke Yazawa

doi:10.2172/1994804

AlN Base Material Development for High Temperature Application

Keisuke Yazawa

Materials Science

Research output: NLR › Poster

Abstract

Polar wurtzite AlN-based alloy materials have exceptional optoelectronic and charge transport properties (e.g., Al1-xGaxN in LEDs and Al1-xScxN as a promising new ferroelectric1). Other cation substitutions include Ta3+, Cr3+, Er3+, Yb3+, and small amounts of Gd3+,2-6 but ionic size effects are a serious issue, and other variables affecting solubility are underexplored in this family, hampering development of new functional AlN-based alloys.

Original language	American English
Publisher	National Laboratory of the Rockies (NLR)
DOIs	https://doi.org/10.2172/1994804
State	Published - 2023

NLR Publication Number

NREL/PO-5K00-86397

Keywords

aluminum nitride
semiconductor
wurtzite

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10.2172/1994804

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title = "AlN Base Material Development for High Temperature Application",

abstract = "Polar wurtzite AlN-based alloy materials have exceptional optoelectronic and charge transport properties (e.g., Al1-xGaxN in LEDs and Al1-xScxN as a promising new ferroelectric1). Other cation substitutions include Ta3+, Cr3+, Er3+, Yb3+, and small amounts of Gd3+,2-6 but ionic size effects are a serious issue, and other variables affecting solubility are underexplored in this family, hampering development of new functional AlN-based alloys.",

keywords = "aluminum nitride, semiconductor, wurtzite",

author = "Keisuke Yazawa",

year = "2023",

doi = "10.2172/1994804",

language = "American English",

publisher = "National Laboratory of the Rockies (NLR)",

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T1 - AlN Base Material Development for High Temperature Application

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PY - 2023

Y1 - 2023

N2 - Polar wurtzite AlN-based alloy materials have exceptional optoelectronic and charge transport properties (e.g., Al1-xGaxN in LEDs and Al1-xScxN as a promising new ferroelectric1). Other cation substitutions include Ta3+, Cr3+, Er3+, Yb3+, and small amounts of Gd3+,2-6 but ionic size effects are a serious issue, and other variables affecting solubility are underexplored in this family, hampering development of new functional AlN-based alloys.

AB - Polar wurtzite AlN-based alloy materials have exceptional optoelectronic and charge transport properties (e.g., Al1-xGaxN in LEDs and Al1-xScxN as a promising new ferroelectric1). Other cation substitutions include Ta3+, Cr3+, Er3+, Yb3+, and small amounts of Gd3+,2-6 but ionic size effects are a serious issue, and other variables affecting solubility are underexplored in this family, hampering development of new functional AlN-based alloys.

KW - aluminum nitride

KW - semiconductor

KW - wurtzite

U2 - 10.2172/1994804

DO - 10.2172/1994804

M3 - Poster

PB - National Laboratory of the Rockies (NLR)

ER -

AlN Base Material Development for High Temperature Application

Abstract

NLR Publication Number

Keywords

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