Ab Initio Calculation of Hydrostatic Absolute Deformation Potential of Semiconductors: Article No. 042104

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NLR Publication Number

@article{11e06e9b64c54c8e8d9f6cffe2878e2f,

title = "Ab Initio Calculation of Hydrostatic Absolute Deformation Potential of Semiconductors: Article No. 042104",

keywords = "gallium arsenide (GaAs), hydrostatic absolute deformation potential (ADP), lattice harmonic expansions, semiconductors, Si, ZnSe",

author = "Suhuai Wei",

year = "2006",

doi = "10.1063/1.2168254",

language = "American English",

volume = "88",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Ab Initio Calculation of Hydrostatic Absolute Deformation Potential of Semiconductors

T2 - Article No. 042104

AU - Wei, Suhuai

PY - 2006

Y1 - 2006

KW - gallium arsenide (GaAs)

KW - hydrostatic absolute deformation potential (ADP)

KW - lattice harmonic expansions

KW - semiconductors

KW - Si

KW - ZnSe

U2 - 10.1063/1.2168254

DO - 10.1063/1.2168254

M3 - Article

SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -