Abstract
The ease with which screen-printed silver is deposited and its high conductivity make it an appealing choice for gridline material on CIGS-based photovoltaic devices. However, present results suggest silver diffusion into the device can cause severe reductions in efficiency after as little as 200 h at 85 °C. Dramatic reductions in fill factor, characterized by unusual inflections in the power quadrant of current-voltage curves, are observed for devices with silver gridlines but not for those with nickel or aluminum gridlines. The shape of the current-voltage curves demonstrate that the degradation mode is not simply due to changes in resistance but is consistent with the creation of a secondary barrier near the device junction.
| Original language | American English |
|---|---|
| Article number | 6338995 |
| Pages (from-to) | 457-460 |
| Number of pages | 4 |
| Journal | IEEE Journal of Photovoltaics |
| Volume | 3 |
| Issue number | 1 |
| DOIs | |
| State | Published - 2013 |
NLR Publication Number
- NREL/JA-5200-56300
Keywords
- Buffer
- Cu(In,Ga)Se (CIGS)
- diffusion
- gridlines
- photocurrent
- silver
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