8% CuInSe2-Based Solar Cell Formed from an Electrodeposited Precursor Film

doi:10.1088/0268-1242/11/6/020

8% CuInSe2-Based Solar Cell Formed from an Electrodeposited Precursor Film

NREL

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Abstract

An 8% CuInSe2 (CIS) based solar cell was developed using an electrodeposited CIS precursor film subjected to post-deposition heat treatment at 55 degree C in Se and In atmostpheres. The cell structure consisted of Mo/CIS/CdS/i-ZnO/ZnO/MgF2/Al-Ni. The cell parameters such as Jsc=32.1 mA cm-2, Voc=394 mV, FF=62.3% and .eta. =7.9% were determined from I-V characterization of the annealed cell at alight intensity of 1000 W m-2. The cell parameters improved after annealing in air at 200 degree C. A carrier density of 6.3 X 10(17) cm-3 was obtained from the C-V characterization of the cell.

Original language	American English
Pages (from-to)	964-967
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	11
Issue number	6
DOIs	https://doi.org/10.1088/0268-1242/11/6/020
State	Published - 1996

NLR Publication Number

NREL/JA-21728

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10.1088/0268-1242/11/6/020

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title = "8\% CuInSe2-Based Solar Cell Formed from an Electrodeposited Precursor Film",

abstract = "An 8\% CuInSe2 (CIS) based solar cell was developed using an electrodeposited CIS precursor film subjected to post-deposition heat treatment at 55 degree C in Se and In atmostpheres. The cell structure consisted of Mo/CIS/CdS/i-ZnO/ZnO/MgF2/Al-Ni. The cell parameters such as Jsc=32.1 mA cm-2, Voc=394 mV, FF=62.3\% and .eta. =7.9\% were determined from I-V characterization of the annealed cell at alight intensity of 1000 W m-2. The cell parameters improved after annealing in air at 200 degree C. A carrier density of 6.3 X 10(17) cm-3 was obtained from the C-V characterization of the cell.",

author = "NREL",

year = "1996",

doi = "10.1088/0268-1242/11/6/020",

language = "American English",

volume = "11",

pages = "964--967",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "6",

}

TY - JOUR

T1 - 8% CuInSe2-Based Solar Cell Formed from an Electrodeposited Precursor Film

AU - NREL, null

PY - 1996

Y1 - 1996

N2 - An 8% CuInSe2 (CIS) based solar cell was developed using an electrodeposited CIS precursor film subjected to post-deposition heat treatment at 55 degree C in Se and In atmostpheres. The cell structure consisted of Mo/CIS/CdS/i-ZnO/ZnO/MgF2/Al-Ni. The cell parameters such as Jsc=32.1 mA cm-2, Voc=394 mV, FF=62.3% and .eta. =7.9% were determined from I-V characterization of the annealed cell at alight intensity of 1000 W m-2. The cell parameters improved after annealing in air at 200 degree C. A carrier density of 6.3 X 10(17) cm-3 was obtained from the C-V characterization of the cell.

AB - An 8% CuInSe2 (CIS) based solar cell was developed using an electrodeposited CIS precursor film subjected to post-deposition heat treatment at 55 degree C in Se and In atmostpheres. The cell structure consisted of Mo/CIS/CdS/i-ZnO/ZnO/MgF2/Al-Ni. The cell parameters such as Jsc=32.1 mA cm-2, Voc=394 mV, FF=62.3% and .eta. =7.9% were determined from I-V characterization of the annealed cell at alight intensity of 1000 W m-2. The cell parameters improved after annealing in air at 200 degree C. A carrier density of 6.3 X 10(17) cm-3 was obtained from the C-V characterization of the cell.

U2 - 10.1088/0268-1242/11/6/020

DO - 10.1088/0268-1242/11/6/020

M3 - Article

SN - 0268-1242

VL - 11

SP - 964

EP - 967

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 6

ER -

8% CuInSe2-Based Solar Cell Formed from an Electrodeposited Precursor Film

Abstract

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