18.5% Copper Indium Gallium Diselenide (CIGS) Device Using Single-Layer, Chemical-Bath-Deposited ZnS(O,OH)

Raghu N. Bhattacharya; Miguel A. Contreras; Glenn Teeter

doi:10.1143/JJAP.43.L1475

18.5% Copper Indium Gallium Diselenide (CIGS) Device Using Single-Layer, Chemical-Bath-Deposited ZnS(O,OH)

Raghu N. Bhattacharya
, Miguel A. Contreras
, Glenn Teeter

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

95 Scopus Citations

Abstract

The recent development of a chemical-bath-deposited (CBD) ZnS(O,OH) layer that enabled an 18.5%-efficient copper indium gallium diselenide (CIGS) devices using a single-layer of CBD ZnS(O,OH) is reported in this paper. Such buffer layers could potentially replace CdS in the CIGS solar cell.

Original language	American English
Pages (from-to)	L1475-L1476
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	43
Issue number	11 B
DOIs	https://doi.org/10.1143/JJAP.43.L1475 https://doi.org/10.1143/JJAP.43.L1475
State	Published - 2004

NLR Publication Number

NREL/JA-590-37856

Keywords

Chemical bath deposition (CBD)
Copper indium gallium diselenide (CIGS)
ZnS(O,OH)

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title = "18.5\% Copper Indium Gallium Diselenide (CIGS) Device Using Single-Layer, Chemical-Bath-Deposited ZnS(O,OH)",

abstract = "The recent development of a chemical-bath-deposited (CBD) ZnS(O,OH) layer that enabled an 18.5\%-efficient copper indium gallium diselenide (CIGS) devices using a single-layer of CBD ZnS(O,OH) is reported in this paper. Such buffer layers could potentially replace CdS in the CIGS solar cell.",

keywords = "Chemical bath deposition (CBD), Copper indium gallium diselenide (CIGS), ZnS(O,OH)",

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AU - Bhattacharya, Raghu N.

AU - Contreras, Miguel A.

AU - Teeter, Glenn

PY - 2004

Y1 - 2004

N2 - The recent development of a chemical-bath-deposited (CBD) ZnS(O,OH) layer that enabled an 18.5%-efficient copper indium gallium diselenide (CIGS) devices using a single-layer of CBD ZnS(O,OH) is reported in this paper. Such buffer layers could potentially replace CdS in the CIGS solar cell.

AB - The recent development of a chemical-bath-deposited (CBD) ZnS(O,OH) layer that enabled an 18.5%-efficient copper indium gallium diselenide (CIGS) devices using a single-layer of CBD ZnS(O,OH) is reported in this paper. Such buffer layers could potentially replace CdS in the CIGS solar cell.

KW - Chemical bath deposition (CBD)

KW - Copper indium gallium diselenide (CIGS)

KW - ZnS(O,OH)

UR - https://www.scopus.com/pages/publications/11144222568

U2 - 10.1143/JJAP.43.L1475

DO - 10.1143/JJAP.43.L1475

M3 - Article

AN - SCOPUS:11144222568

SN - 0021-4922

VL - 43

SP - L1475-L1476

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 11 B

ER -

18.5% Copper Indium Gallium Diselenide (CIGS) Device Using Single-Layer, Chemical-Bath-Deposited ZnS(O,OH)

Abstract

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Keywords

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