Hongling Lott is an experimental materials science postdoctoral researcher at NLR. She received a doctorate in materials science and engineering from the University of Michigan, and double bachelor degrees in physics and computer science from the University of California, Berkeley. Her current research focuses on the investigation of arsenic doping and diffusion within single crystal and polycrystalline cadmium telluride (CdTe) (and related semiconductors) deposited by molecular beam epitaxy (MBE). She also works on proof-of-concept single crystal CdTe photovoltaic (PV) device fabrication and characterization. Through her studies, she seeks to develop fundamental understandings of materials to drive improvement in typical CdTe based PV devices. Her doctoral thesis is titled Nanoscale GaN Epitaxy and Polytype Selection in Liquid-metal Mediated Environments and Writing-to-Learn in Materials Science and Engineering. During her doctoral work, she studied growth mechanism of gallium nitride and indium nitride nanostructures (via MBE) on silicon for energy, quantum, and optoelectronic applications. She also studied engineering education with an emphasis on the effect of writing assignments (Writing to Learn) on materials science curricula.

Co-chair, Gordon Research Seminar: Defects in Semiconductors (2022) 

Co-chair, Engineering Research Symposium, University of Michigan (2019) 

Lecturer, CS 70 - Discrete Mathematics and Probability Theory, University of California, Berkeley (2017)